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KMID : 0381919970270030257
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Korean Journal of Microscopy
1997 Volume.27 No. 3 p.257 ~ p.263
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TEM Observations on the Blue-green Laser Diode
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Lee Hwack-Joo
Ryu Hyun
Park Hae-Sung
Kim Tae-Il
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Abstract
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Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.
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KEYWORD
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II-VI compounds, blue-green laser diode, stacking fault, superlattice, TEM, pseudomorphic
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